Liquid crystal display device

ABSTRACT

Disclination of an active matrix liquid crystal display device is reduced. Portions of pixel electrodes are formed so as to mutually overlap with a convex portion. If the height of the convex portion is too tall, the amount of light leakage increases due to liquid crystals orienting diagonally with respect to a substrate surface. (See FIG.  1 C.) If the height of the convex portion is low, the disclination reduction effect is low. The optimal convex portion height is thus determined.

This application is a continuation of U.S. application Ser. No.12/604,949, filed on Oct. 23, 2009 now U.S. Pat. No. 8,102,480 which isa divisional of U.S. application Ser. No. 11/827,993, filed on Jul. 13,2007 (now U.S. Pat. No. 7,609,332 issued Oct. 27, 2009) which is adivisional of U.S. application Ser. No. 10/774,834, filed on Feb. 9,2004 (now U.S. Pat. No. 7,248,320 issued Jul. 24, 2007) which is acontinuation of U.S. application Ser. No. 09/949,415, filed on Sep. 7,2001 (now U.S. Pat. No. 6,734,924 issued May 11, 2004).

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a semiconductor device having circuitsstructured by electric-field effect transistors (FETs), for example,thin film transistors (TFTs), and to a method of manufacturing thesemiconductor device. The present invention relates, for example, to asemiconductor device, typically a liquid crystal display panel, and toan electronic device in which such a semiconductor device is mounted asits component.

Note that, throughout this specification, the term electro-opticaldevice indicates general devices for performing shading display bychanging an electrical signal, and that liquid crystal display devicesand display devices using electroluminescence (EL) are included in thecategory of electro-optical device.

Note also that, throughout this specification, the term elementsubstrate indicates general substrates on which active elements such asTFTs and MIMs are formed.

2. Description of the Related Art

Techniques of structuring thin film transistors using semiconductor thinfilms (having thicknesses on the order of several rim to several hundrednm) formed on a substrate having an insulating surface have been focusedupon in recent years. The thin film transistors are being widely appliedto electronic devices like ICs and semiconductor devices, and inparticular, their development has accelerated rapidly as switchingelements of liquid crystal display devices.

Liquid crystal display devices are known to be roughly divided intoactive matrix types and passive matrix types.

A high-grade image can be obtained with active matrix liquid crystaldisplay devices using TFTs as switching elements. Active matrixapplications are generally to notebook type personal computers, but theyare also expected to be used in televisions for a home and in portableinformation terminals.

The active matrix liquid crystal display devices are generally driven byline inversion drive. With the line inversion drive, for example sourceline inversion drive, the polarity of voltages applied to adjacentsource lines differs, as shown in FIGS. 37A and 37B, and the polarity ofthe voltage applied to each source line changes each frame. FIGS. 37Aand 37B show the polarity of voltages applied to pixels during thesource line inversion drive. Drive in which the polarity of the voltagediffers for each adjacent source line is referred to as the source lineinversion drive. Drive in which the polarity of the voltage differs foreach adjacent gate line is referred to as gate line inversion drive.

FIG. 10 shows schematically a cross section of a pixel portion of aliquid crystal display device. An electric field formed between pixelelectrodes 102 a and 102 b formed on a substrate 101, and an opposingelectrode 103 formed on an opposing substrate 104, as shown in FIG. 10,is referred to as a vertical direction electric field 105 in thisspecification. Further, an electric field formed between the adjacentpixel electrodes 102 a and 102 b is referred to as a horizontaldirection electric field 106 in this specification.

Liquid crystals in the vicinity of the pixel electrodes orientthemselves along the horizontal direction electric field if the lineinversion drive is performed, the liquid crystal orientation in edgeportions of the pixel electrodes becomes nonuniform, and disclinationsdevelop. In order to obtain a good quality black level, light shieldingfilms for covering the disclinations are necessary. However, theaperture ratio drops if the disclinations are covered by the lightshielding films. It is necessary to come up with a scheme in which agood quality black level can be obtained, and as little disclination aspossible develops when displaying a high aperture ratio, bright image.Note that, in this specification, liquid crystal orientationirregularities developing due to differences in the direction of thepre-tilt angle, and differences in the twist direction, at liquidcrystal orientation film interfaces are referred to as “disclinations”.Further, regions having different brightnesses produced due to anirregular orientation state of the liquid crystals when a polarizationplate is formed is referred to as “light leakage”.

In particular, the occupied ratio of pixels in which disclinations andlight leakage developing due to horizontal direction electric fields islarge enough that it cannot be ignored in liquid crystal display devicesin which the pixels are formed at a very fine pitch, such as that of aprojecting liquid crystal display device. Further, these disclinationsand light leakage are expanded when projected onto a screen with theprojecting liquid crystal display device, and therefore whether or notthe light leakage and disclinations can be suppressed is vital inmaintaining contrast.

SUMMARY OF THE INVENTION

An object of the present invention is to provide an element structuresuch that liquid crystal disclination and light leakage can be stoppedin an active matrix liquid crystal display device.

The following measures are taken in order to solve the above statedproblems with the conventional technique.

Overlapping edge portions of pixel electrodes with predetermined heightconvex portions.

FIG. 2 is a cross sectional diagram of a simulation model. The presentinvention utilizes moving disclinations and light leakage, which arecaused when a voltage is applied to liquid crystal 202, to edge portionsof pixel electrodes by forming edge portions of pixel electrodes 203 aand 203 b on a first substrate (not shown) so as to overlap with convexportions 204 formed on a level surface as shown in FIG. 2. An opposingelectrode 201 is formed in an opposing substrate 207.

Note that, in this specification, the convex portions are formedselectively below the pixel electrodes. Regions in which the pixelelectrodes overlap with upper edge portions of the convex portions arereferred to as first regions (a) of the pixel electrodes. Regions inwhich the pixel electrodes are formed in side portions of the convexportions are referred to as second regions (b) of the pixel electrodes.Regions in which the pixel electrodes are formed on a level surface, andwhich contact the second regions of the pixel electrodes, are referredto as third regions (c) of the pixel electrodes.

Further, the height (h) of the convex portions is the maximum value ofthe length of a vertical line formed from the upper edge portions of theconvex portions to the level surface on which the convex portions areformed.

In addition, a cell gap (d) is the distance from the opposing electrodeformed on the opposing substrate (second substrate) to the third regionof the pixel electrode.

An inter-pixel electrode distance (s) is the distance between the firstregions of mutually adjacent pixel electrodes.

Conventionally, if there are convex portions in the orientation surfaceof liquid crystals, then the orientation of the liquid crystal isdisordered and light leakage develop at the convex portions, andtherefore it is thought that a liquid crystal orientation surface shouldbe as level as possible. However, the applicants of the presentinvention found that when the first regions of the pixel electrodesMimed on the convex portions having a predetermined height, and thesecond regions of the pixel electrodes formed on the side portions ofthe convex portions having a predetermined height, are present,simulation results on the liquid crystal orientation show that liquidcrystal orientation irregularities caused by the horizontal directionelectric field in driving a liquid crystal display device can bereduced. Specifically, locations at which disclinations andlight-leakage appear are in the edges of the pixel electrodes duringblack display.

This phenomenon is explained by the schematic diagrams of FIGS. 1A to 1Cwhich show the principles of the present invention. The liquid crystalorientation method is taken as a TN method. FIGS. 1A to 1C show liquidcrystal orientations when driving a liquid crystal display device by a 5V or −5 V video voltage with line inversion drive. An orientation filmis not shown in the figures.

First, as shown in FIG. 1A, if edge portions of the pixel electrodes 203a and 203 b formed on the first substrate (not shown in the figures) areformed on the convex portion 204, then it becomes more difficult fordisclinations to develop, compared to the case where no convex portionpresents. Nevertheless, if the height of the convex portion is low, thenthe influence of a horizontal direction electric field formed betweenthe pixel electrode 203 a and the pixel electrode 203 b is strong withrespect to a vertical direction electric field formed between the pixelelectrodes 203 a and 203 b and the opposing electrode 201 formed on thesecond substrate (not shown in the figures). Liquid crystal molecules208 in the vicinity of the convex portion orient with an inclination ina diagonal direction with respect to the substrate surface. Thus, lightleakage can be seen below a cross Nicol polarization plate. Further, apre-tilt angle of liquid crystal molecules 209 in the vicinity of theinterface of the orientation film is determined by rubbing directions205 and 206, and therefore a disclination 210 having high light strengthis formed at the point where the direction of the horizontal directionelectric field in the vicinity of the interface differs from thedirection of the liquid crystal molecules in the vicinity of theinterface due to rubbing.

However, the higher the convex portion becomes, the more the position atwhich the disclination 210 seen in FIG. 1A appears changes to the edgeof the pixel electrode. In addition, if the convex portion 204overlapping with the edge portions of the pixel electrodes 203 a and 203b is made higher, then a vertical direction electric field formedbetween a first region 215 of the pixel electrode and the opposingelectrode 201 becomes stronger with increasing the height of the convexportion, as shown in FIG. 1B, and the influence of the horizontaldirection electric field becomes weaker. Several vertical directionelectric fields are formed almost in the substrate surface by anelectric field formed between a second region. 212 of the pixelelectrode, among the pixel electrodes 203 a and 203 b, formed in theside portion of the convex portion and the opposing electrode 201. TNmethod liquid crystals are positive type liquid crystals, and thereforethe longitudinal axes of liquid crystal molecules 211 orient parallel tothe electric fields. Disclination and light leakage in the vicinity ofthe convex portion is thus reduced.

Next, as shown in FIG. 1C, if the height of the convex portion 204 ismade higher, then the liquid crystals on the pixel electrode 203 b forman electric field having a direction diagonal with respect to thesubstrate surface, the same direction as the pretilt angle, between theopposing electrode and the second region of the pixels. Thus, liquidcrystal molecules 213 orient diagonally with respect to the substratesurface, along the electric field, and a light leakage having a widthwhich cannot be ignored is formed in the vicinity of the convex portion.On the pixel electrode 203 a, an electric field having a directiondiagonal with respect to the substrate surface and formed between asecond region 216 of the pixel electrode and the opposing electrode isopposite to the direction of the pre-tilt angle of the liquid crystals,and therefore it is difficult for liquid crystals 217 to follow theelectric field, and formation of light leakage becomes relativelydifficult. However, the width of the light leakage formed due to theelectric field formed between the opposing electrode and the secondregion 212 of the pixel electrode 203 b becomes wider, and overall, theaperture ratio drops.

It can be understood from the above that the optimal value of the heightof the convex portion exists in order to reduce both the disclination ofblack display and the width of the light leakage when the edge portionsof the pixel electrodes are formed on the convex portion. If the convexportion is too tall, then overall, the width of the light leakage willbecome larger (see FIG. 1C.) The structures of FIG. 1A and FIG. 1B canincrease the aperture ration. The subsequent simulation resultssubstantiate these principles.

The optimal value of the height of the convex portion can be consideredto be determined with a cell gap (namely, an element for determining thestrength of the vertical direction electric field) as a parameter.

The applicants of the present invention performed simulations, andconfirmed the optimal value of the convex portion height.

Disclination and light leakage due to horizontal direction electricfields become problems in particular when the pixel area is small, andthe proportion of the pixel occupied by the disclination and the lightleakage is large enough that it cannot be ignored. In other words,mainly for cases where the device is used as a projection liquid crystaldisplay device. Projection liquid crystal display devices have a smallpixel pitch, and inevitably the distance between the pixel electrodes issmall at 4.0 μm or less. The applicants of the present inventionperformed simulations focusing on inter-pixel electrode distances ofequal to or less than 4.0 μm in order to reduce the disclination and thelight leakage in the projection liquid crystal display device.

A simulation model is shown in FIG. 2. The opposing electrode 201, theliquid crystals 202, the convex portion 204, and the pixel electrodes203 a and 203 b become the structural elements of the simulation modelin FIG. 2. The simulation model of FIG. 2 was taken as one unit, andperiodically repeated.

The simulation parameters are as follows:

cell gap, d: 4.5 μm, 3.0 μm;

distance between pixel electrodes, s: 2 μm, 4 μm;

convex portion height, h: 0 μm, 0.2 μm, 0.3 μm, 0.4 μm, 0.5 μm, 0.7 μm,1.0 μm, and 1.5 μm; and

pixel pitch, p: 18 μm, 43 μm.

Fixed conditions in the simulations are as follows:

width of first region of pixel electrode, o: 1.0 μm;

electric potential of the pixel electrode 203 a: +5 V;

electric potential of the pixel electrode 203 b: −5 V; and

electric potential of the opposing electrode 201: 0 V.

In order to generalize the relationship between the distance s betweenpixel electrodes, the cell gap d, and the height h of the convex portionon which the edge portion of the pixel electrode is formed, thesimulation was performed with cell gaps of 4.5 μm and 3.0 μm. ZLI4792was used for the liquid crystals for both cell gaps, 4.5 μm and 3.0 μm,and the orientation was found by computation.

The pre-tilt angle of the liquid crystals was set to 6.0°, and thechiral pitch was set to left handed at 70 μm. The rubbing direction 205and 206 are shown in FIG. 2. The twist angle is 90°. The orientation ofthe liquid crystal is TN method.

Further, in order to increase the number of evaluations and grasp thetendencies, the simulations were performed as stated above with twopixel pitches.

Liquid crystal orientation simulation software from Syntech Corp.entitled LCD Master 2SBENCH was used, and simulations of the liquidcrystal orientation ware run. 2SBENCH shows the liquid crystalorientation by a two-dimensional planer surface composed of the cell capdirection and the substrate surface direction.

The simulation results are as shown below. FIGS. 3 to 8 are partialblowup diagrams of the simulation results.

FIGS. 3 to 8 are simulations in which the height of the convex portionwas changed at conditions of the gap d set to 4.5 μm, the inter-pixelspacing distance s set to 2.0 μm, and the pixel pitch p set to 18 μm.The transmittivity in each coordinate, calculated from equipotentiallines, liquid crystal directors, and index of refraction anisotropy, isshown. The pixel electrode 203 a has coordinates from 1 to 17 μm, andthe pixel electrode 203 b has coordinates from 19 to 35 μm, and FIGS. 3to 8 show blowups of the points at which there is light leakage anddisclination in the vicinity of the convex portion. The liquid crystalis a positive type, and therefore lines of electric force can beconsidered to have nearly the same direction as the director of theliquid crystals.

The orientation of the liquid crystals on a pixel electrode having a −5Velectric potential is explained below.

A horizontal electric field is formed up through a region entering theinside of the pixel electrode when there is no convex portion, as shownin FIG. 3. Further, disclination develop in regions in which thedirection of the horizontal electric field and the direction of theliquid crystal pre-tile angle are opposite.

When the height of the convex portion is 0.3 μm, the vertical directionelectric field becomes stronger due to the first region of the pixelelectrode formed in the upper edge portion of the convex portion, andtherefore the position of the disclination moves toward the outside ofthe pixel electrode, as shown in FIG. 4, compared with the case of noconvex portion in FIG. 3.

If the height of the convex portion becomes taller at 0.7 μm, as shownin FIG. 5, then there are many liquid crystals which become orientedperpendicular to the substrate along the lines of electric force due tothe effect of the horizontal direction electric field becoming stronger,and due to the effect of the electric force lines, due to the secondregion of the pixel electrode formed in the side portion of the convexportion and the opposing electrode, possessing components nearlyperpendicular with respect to the substrate surface. The disclination inthe vicinity of the convex portion becomes less.

When the height of the convex portion becomes higher at 1.0 μm, thewidth of the disclination in the vicinity of the convex portion drops byjust 0.2 μm compared with the case in which the convex portion height is0.7 μm, as shown in FIG. 6.

As shown in FIG. 7, the Lines of electric force formed by the secondregion of the pixel electrode formed in side portion of the convexportion, and by the opposing electrode, possess an angle order of 60°,with respect to the substrate surface, in the vicinity of the convexportion, which becomes at 1.5 μm. The liquid crystals orient along theelectric force lines, and light leakage is formed near the convexportion.

Note that the angle of the electric force lines with respect to thesubstrate surface is estimated from the distribution of equipotentiallines.

In FIG. 8, the height of the convex portion increases to 3.0 μm, and thevertical direction electric field becomes stronger. The liquid crystalson the third region of the pixel electrode of the edge portion of theconvex portion therefore orient nearly perpendicular to the surface ofthe substrate. However, the electric field formed between the secondregion of the pixel electrode formed in the side portion of the convexportion, and the substrate surface, possesses an angle on the order of30°, with respect to the substrate surface, and the liquid crystalsorient along the lines of electric force. Broad light leakage isconsequently formed in the vicinity of the convex portion.

The orientation of the liquid crystals of FIG. 4 corresponds to theschematic diagram of FIG. 1A. The orientation of the liquid crystals ofFIG. 5 and FIG. 6 corresponds to the schematic diagram of FIG. 1B, andthe orientation of the liquid crystals of FIG. 7 and FIG. 8 correspondsto the schematic diagram of FIG. 1C. Namely, it is confirmed that thelight leakage of the liquid crystals becomes larger if the height of theconvex portion exceeds an upper limit.

In order to improve the display quality, a systematic simulation wasperformed. The distance between one edge portion and another edgeportion of the disclination and the light leakage influencing theaperture ratio was paid attention to.

Data was also taken regarding the light leakage and the disclinationwidth of a pixel electrode having a −5 V electric potential. This isbecause the light leakage and the disclination of a pixel electrodehaving a −5 V electric potential greatly influences the display qualitydue to high light strength.

FIG. 9 and FIG. 36 show the simulation results. FIG. 9 is a figure inwhich the height h of the convex portion, the light leakage and thedisclination width x are graphed with respect to the cell gap d in thesimulation model of FIG. 2. The term light leakage and disclinationwidth x denotes the width of a region having high brightness due todisclination and light leakage formed on both sides of the convexportion.

FIG. 36 is a figure in which the height h of the convex portion, and thelight leakage and the disclination width y are graphed with respect tothe cell gap d in the simulation model of FIG. 2. The term light leakageand disclination width y denotes the width of a region having highbrightness due to disclination and light leakage formed in one side ofthe convex portion, namely in an electrode side having a −5 V electricpotential.

Simulations were performed with the pixel pitch p set to 18 μm and 43 μmwhen the cell gap was 4.5 μm. Further, the distance s between adjacentpixel electrodes was set to 2.0 μm or to 4.0 μm.

When the cell gap was 3.0 μm, the distance s between adjacent pixelelectrodes was set to 2.0 μm or 4.0 μm. The pixel pitch p was set to 18μm.

The relationship between the convex portion height, and the width of thelight leakage and the disclination shows similar tendencies in both FIG.9 and FIG. 36.

First, the relationship between the convex portion height and the lightleakage and disclination width nearly did not change in accordance topixel pitch. This is because formation of light leakage and disclinationis a phenomenon caused by the horizontal direction electric field andthe vertical direction electric field of the edge portions of the pixelelectrodes.

Further, light leakage and disclination become relatively less with asmaller distance between adjacent pixel electrodes.

The regions of orientation irregularities of the liquid crystals,typically light leakage and disclination, are reduced along withincreasing height of the pixel portion, and are not due to the pixelpitch p and the cell gap d, in both FIG. 9 and FIG. 36. If the height ofthe convex portion becomes too tall, there are conversely more regionsof orientation irregularities. An optimal convex portion height isdetermined by the distance between the cell gap and the pixel electrode.

Considering the inflection point of the graph, it is preferable that theheight of the convex portion in which the effect of a reduction in theliquid crystal regions having orientation irregularities appearssignificantly, be equal to or greater than 4.4% of the cell gap, andequal to or less than 22.5% of the cell gap when the call gap is 4.5 μm.

When the cell gap is 3.0 μm as well, and the distance s between thepixel electrodes is equal to or less than 2.0 μm, a good effect ofreducing, compared to a case in which there is no convex portion, theregions having orientation irregularities can be obtained by setting theheight of the convex portion to be equal to or greater than 4.4% of thecell gap, and equal to or less than 22.5% of the cell gap.

If the height of the convex portion is less than 4.4% with respect tothe cell gap, then the width of the Light leakage and the disclinationdoes not change much, even if the height of the convex portion isincreased. If the height of the convex portion exceeds 22.5% to the cellgap, then the light leakage and the disclination width increases.

Further, orientation irregularities of the liquid crystals easilydevelop due to rubbing non-uniformity if the convex portion is high, andtherefore reducing the height of the convex portion, thereby reducingthe light leakage and the disclination width, is preferable to insuredisplay quality. Consequently, for a case in which the cell gap is 4.5μm, the height of the convex portion may be suppressed to be greaterthan or equal to 4.4% of the cell gap, and less than or equal to 15.6%of the cell gap. Nearly equal light leakage and disclination reductioneffects are obtained when the height of the convex portion is with therange of greater than or equal to 4.4%, and less than or equal to 22.5%,of the cell gap.

Further, when the cell cap is 3.0 μm and the distance s between thepixel electrodes is equal to or less than 2.0 μm, a good effect ofreducing the light leakage and the disclination is obtained when theheight of the convex portion is greater than or equal to 4.4% of thecell gap, and less than or equal to 15.6% of the cell gap, the same aswhen the height of the convex portion was set equal to or greater than4.4%, and equal to or less than 22.5%, of the cell gap.

Conversely, there was more light leakage when the height of the convexportion was 22.5% when the distance s between the pixel electrodes wasset to 4.0 μm. Inclusive of when the distance between the pixelelectrodes is 4.0 μm, it is therefore preferable that the height of theconvex portion be equal to or greater than 4.4%, and equal to or lessthan 15.6%, or the cell gap.

In other words, under conditions of the distance between the pixelelectrodes being equal to or less than 4.0 μm, the height of the convexportion may be set equal to or greater than 4.4%, and equal to or lessthan 22.5%, of the cell gap when the cell gap is equal to or greaterthan 3.0 μm, and equal to or less than 4.5 μm. The height of the convexportion is preferably set greater than or equal to 4.4%, and less thanor equal to 15.6%, of the cell gap.

The smaller the cell gap, the smaller the height of the convex portionneeded for reducing the light leakage and the disclination width. Forcases of the call gap being from 3.0 μm to 4.5 μm, good liquid crystalorientation can be obtained with a convex portion height of 15.6% orless. For cases of the cell gap being less than 3.0 μm, it is thereforeconsidered that the necessary convex portion height will be 15.6% orless to sufficiently reduce the light leakage and disclination width.

The height of the convex portion may be set equal to or less than 15.6%of the cell gap when the cell gap is less than or equal to 3.0 μm. Ofcourse, considering the inflection point of the graph, it can beexpected that a good effect will also be obtained if the height of theconvex portion is set equal to or less than 6.7% of the cell gap.

When the cell gap is 3.0 μm, the light leakage and the disclinationwidth are monotonically reduced as the convex portion becomes higher,provided that the height of the convex portion is equal to or less than6.7% with respect to the cell gap. If the cell gap is made smaller atless than or equal to 3.0 μm, it can be considered that the region inwhich the light leakage and the disclination width are monotonicallyreduced with increasing convex portion height is in a range in which theheight of the convex portion does not exceed 63% with respect to thecell gap.

An upper limit to the height of the convex portion, or both upper andlower limits, can thus be determined. There is a concern that rubbingirregularities may occur if the fiber tips of a rubbing cloth aredisordered, and therefore the determination of an upper limit for theheight of the convex portion is necessary in order to manufacture aliquid crystal panel. Further, the optimal value of the height of theconvex portion with respect to the cell gap tends to become smaller asthe cell gap becomes smaller.

An optimal value for the height of the convex portion thus determinedcan be used not only for the TN method, but can also be widely used asmeans for hiding liquid crystal disclination in a normally white modeorientation method.

The optimal value of the convex portion height is one in which the linesof electric force formed by a horizontal direction electric field and avertical direction electric field of an active matrix liquid crystaldisplay device are suitably regulated, and as shown in FIG. 1B, one inwhich regions with generated electric force lines possessing componentsperpendicular to the surface of the substrate are increased in the edgeportions of the pixel electrode.

Therefore, although the simulations were performed for a transmittingtype liquid crystal display device, it can be considered possible toapply the present invention to a reflective type liquid crystal displaydevice as well. This is because a voltage may also be applied to thepixel electrodes with a reflective type liquid crystal display device,and when orienting the liquid crystals by a vertical direction electricfield, unnecessary electric fields directed diagonally with respect tothe substrate surface are reduced, and light leakage and disclination ofthe edge portions of the pixel electrodes can be reduced.

Further, the simulation was made using the TN method, but the liquidcrystal orientation method is not limited to the TN method. This isbecause, in an active matrix liquid crystal display device, unnecessaryelectric fields directed diagonally with respect to the substratesurface can be reduced by optimizing the convex portion height whenorienting the liquid crystals by using a vertical direction electricfield. For example, it is considered that it is possible to apply thepresent invention to methods such as an OCB (optically controlledbirefringence) method, an STN method, and an EC method usinghomogeneously oriented cells.

Further, provided that orientation faults are not induced in the liquidcrystals by the convex portion, it is thought that it is also possibleto apply the present invention to an orientation method using sumecticliquid crystals. For example, it is possible to apply the presentinvention to a liquid crystal display device using ferroelectric liquidcrystals or anti-ferroelectric liquid crystals. Further, by adding highmolecular weight molecules with liquid crystal properties to theseliquid crystals, it is thought that it is also possible to apply thepresent invention to liquid crystal display devices using materialshardened by irradiation of light (for example, ultraviolet light).

The simulations were performed with an angle 90° (hereafter referred toas a convex portion taper angle) formed between the surface contactingthe second region of the pixel electrode formed in the side surface ofthe convex portion, and the third region of the pixel electrode formedin the level surface. However, it is also possible to apply the presentinvention if the convex portion taper angle is less than 90°. As shownin the cross sectional diagram of FIG. 35 for the lines of electricforce when the convex portion has a taper, the electric force lines aregenerated in a direction perpendicular to a conductor for cases in whichthe taper angle θ of the convex portion 204 is less than 90°, andtherefore the bend of electric force lines 218 formed between theopposing electrode 201 and second regions 219 of the pixel electrodes203 a and 203 b becomes relaxed when the convex portion has a taper.Liquid crystals 220 orient very well perpendicular with respect to thesubstrate surface. A very large effect in reducing light leakage anddisclination is therefore obtained, compared to when the taper angle is90°, by using the relationship shown in the present invention between aconvex portion height 221 and the cell gap when the convex portion has ataper.

Width of the first region of the pixel electrode on the upper portion ofthe convex portion

Next, changes in the orientation of liquid crystals when the width ofthe first region of the pixel electrode formed overlapping with theupper portion of the convex portion is investigated.

A simulation model is shown in FIG. 2. The opposing electrode 201, theliquid crystals 202, the convex portion 204, and the pixel electrodes203 a and 203 b become the structural elements in FIG. 2.

The simulation parameters are as follows:

cell gap, d: 45 μm;

distance between pixel electrodes, s: 2 μm, 4 μm;

convex portion height, h: 0 μm, 0.5 μm; and

width of first region of pixel electrode, o: −1 μm, −0.5 μm, 0 μm, 0.5μm, 1.0 μm.

The symbol for the width o of the first region of the pixel electrode,such as −1.0 μm, indicates that the pixel electrode is not formed on theconvex portion, and that the edge portion of the pixel electrode islocated at 1.0 μm from the convex portion.

Fixed conditions in the simulations are as follows:

electric potential of the pixel electrode 203 a: +5 V;

electric potential of the pixel electrode 203 b: −5 V;

electric potential of the opposing electrode 201: 0 V; and

pixel pitch, p: 18 μm.

Simulation results are shown in the cross sectional diagrams of FIG. 11to FIG. 15. The distance s between pixel electrodes is 2.0 μm.

In FIG. 11, there is no convex portion. The convex portion and the pixelelectrode do not mutually overlap in FIG. 12, and the edge of the pixelelectrode is located 0.5 μm from the edge of the convex portion. Inother words, the second region of the pixel electrode and the firstregion of the pixel electrode do not exist in FIGS. 11 and 12. Lightleakage from the edges of the pixel and the disclination width x showsno change at all at this point in FIG. 11 and FIG. 12.

The pixel electrode is formed in the side portion of the convex portionin FIG. 13. Namely, there is a second region of the pixel electrode.Compared to FIGS. 11 and 12, the position of the disclination on a pixelelectrode having a −5 V electric potential, moves 0.4 μm to the pixeledge. The vertical direction electric field is made stronger, and thehorizontal direction electric field becomes a little weaker due to thesecond region of the pixel electrode.

The first region of the pixel electrode formed in the edge portion onthe convex portion, and the second region of the present inventionformed in the side portion of the convex portion exist in FIG. 14. Thewidth of the first region of the pixel electrode is 0.5 μm. The verticaldirection electric field becomes stronger, and the disclination on thepixel electrode having a −5V electric potential moves to the edge of thepixel electrode due to the first region of the pixel electrode.

The width of the first region of the pixel electrode is set to 1.0 μm inFIG. 15, compared to 0.5 μm in FIG. 14. The vertical direction electricfield is made additionally stronger with respect to the horizontaldirection electric field due to the 1.0 μm width, and the disclinationon the pixel electrode having a −5 V electric potential moves to theedge of the pixel electrode.

It can thus be understood that there is a disclination reduction effectdue to the existence of the first region of the pixel electrode and thesecond region of the pixel electrode.

Next, data is added for when the distance s between the pixel electrodesis 4.0 μm, and data is systematically taken. FIGS. 16A and 16B show thesimulation results. FIG. 16A is a graph of the width o of the firstregion of the pixel electrode, and the light leakage and thedisclination width x, versus the cell gap d, in the simulation model ofFIG. 2. The term light leakage and disclination width x here indicatesthe width of a region having high brightness causes by disclination andlight leakage formed in both sides of the convex portion.

FIG. 16B is a graph of the width o and the light leakage and thedisclination width y, versus the cell gap d, in the simulation model ofFIG. 2. The term light leakage and disclination width y here indicatesthe width of a region having high brightness causes by disclination andlight leakage formed in one side of the convex portion, namely in theelectrode side having an electric potential of −5V.

From FIGS. 16A and 16B, it can be understood that there is an effect inwhich disclination and light leakage are reduced if the width o of thefirst region of the pixel electrode is equal to or greater than 0.5 μm,preferably equal to or greater than 1.0 μm, without dependence on thedistance s between the pixel electrodes.

The light leakage and the disclination width when the width of the firstregion of the pixel electrode is 0 μm in FIGS. 16A and 16B shows a lightleakage and disclination width of a state in which the pixel electrodeis only formed in the side surface of the convex portion. Compared tocases in which the width of the first region of the pixel electrode isequal to or greater than 0.5 μm, or equal to or greater than 1.0 μm, theeffect of reducing the light leakage and the disclination width isreduced. However, compared to the case in which the width of the firstregion of the pixel electrode is −0.5 μm, in which the pixel electrodedoes not contact the convex portion at all, the light leakage and thedisclination width do drop.

An actual experiment in which the width over which the convex portionand the pixel electrode overlap was carried out. FIG. 33A is an uppersurface diagram of a substrate having a convex portion, and FIGS. 33Band 33C are cross sectional diagrams of the substrate having the convexportion.

Pixel electrodes 301 a denoted by slanted line portions in the uppersurface diagram of FIG. 33A all have, the same electric potential.Further, the pixel electrodes 301 b denoted by vertical line portionsall have the same electric potential. This is in order to connectadjacent pixel electrodes by a transparent conducting film 300 having awidth of 3 μm. Assuming line inversion driving, an electric potential of+5V is imparted to the pixel electrodes 301 a. In addition, an electricpotential of −5 V is imparted to the pixel electrodes 301 b. A rubbingdirection 302 for the substrate having a convex structure is shown inthe figures. A rubbing direction for a substrate opposing the substratehaving the convex structure is perpendicular to the rubbing direction302.

A cross section of the upper surface diagram of FIG. 33A cut along thedashed line G-G′ is shown in FIG. 33B. A cross section of the uppersurface diagram of FIG. 33A cut along the dashed line H-H′ is shown inFIG. 33C. Identical reference symbols are used for the same portions asin FIG. 33A. The edge portions of the pixel electrode 301 a and 301 bformed on the substrate 303 contact a convex portion 304. The distancebetween the adjacent pixel electrodes 301 a and 301 b was set constantat 2.0 μm, and the liquid crystal orientation was confirmed by changingthe width of the pixel electrode overlapping on the convex portion,namely by changing the width 305 of the first region of the pixelelectrode. The width of the first region of the pixel electrode was setto −1.0 μm, 0 μm, 0.5 μm, and 1.0 μm. The cell gap was 4.5 μm, theheight of the convex portion was 0.5 μm, and the pixel pitch was 18 μm.

Photographs of the liquid crystal orientation when the pixel electrodestructure of FIGS. 33A to 33C was used are shown in FIGS. 34A to 34D.The adjacent pixel electrodes in the horizontal direction of the pagehave the same electric potential. The rubbing direction wasperpendicular to the page. An effect of reducing the disclination widthwas found in the experiments as well if the width o of the first regionof the pixel electrodes was equal to or greater than 0.5 μm, preferablyequal to or greater than 1.0 μm. It was found that the disclination andthe light leakage width extending in the horizontal direction of thepage decreases along with increases in the width o of the first regionor the pixel electrodes.

BRIEF DESCRIPTION OF THE DRAWINGS

In the accompanying drawings:

FIGS. 1A to 1C are cross sectional diagrams showing the principles ofthe present invention;

FIG. 2 is a cross sectional diagram showing a simulation model of thepresent invention;

FIG. 3 is a cross sectional diagram showing simulation results whenthere is no convex portion;

FIG. 4 is a cross sectional diagram showing simulation results whenthere is a convex portion having a height of 0.3 μm;

FIG. 5 is a cross sectional diagram showing simulation results whenthere is a convex portion having a height of 0.7 μm;

FIG. 6 is a cross sectional diagram showing simulation results whenthere is a convex portion having a height of 1.0 μm;

FIG. 7 is a cross sectional diagram showing simulation results whenthere is a convex portion having a height of 1.5 μm;

FIG. 8 is a cross sectional diagram showing simulation results whenthere is a convex portion having a height of 3.0 μm;

FIG. 9 is a diagram showing the relationship between: the height of aconvex portion with respect to a cell gap; and the amount of lightleakage and the width of disclination;

FIG. 10 is a cross sectional diagram showing the definition of ahorizontal direction electric field and a vertical direction electricfield;

FIG. 11 is a cross sectional diagram showing simulation results whenthere is no convex portion;

FIG. 12 is a cross sectional diagram showing simulation results when apixel electrode does not overlap with a convex portion;

FIG. 13 is a cross sectional diagram showing simulation results whenthere is a pixel electrode on a side portion of a convex portion;

FIG. 14 is a cross sectional diagram showing simulation results whenthere is a pixel electrode in a side portion and an upper edge portion;

FIG. 15 is a cross sectional diagram showing simulation results whenthere is a pixel electrode in a side portion and an upper edge portion;

FIGS. 16A and 16B are diagrams showing the relationship between thewidth of a first region of a pixel electrode and a disclination width;

FIG. 17 is an upper surface diagram showing an example of an embodimentmode of the present invention;

FIG. 18 is an upper surface diagram shown an example of an embodimentmode of the present invention;

FIG. 19 is an upper surface diagram shown an example of an embodimentmode of the present invention;

FIG. 20 is an upper surface diagram shown an example of an embodimentmode of the present invention;

FIGS. 21A to 21C are cross sectional diagrams showing a process ofmanufacturing an active matrix substrate (Embodiment 1);

FIGS. 22A to 22C are cross sectional diagrams showing the process ofmanufacturing an active matrix substrate (Embodiment 1);

FIG. 23 is a cross sectional diagram showing the process ofmanufacturing an active matrix substrate (Embodiment 1);

FIG. 24 is a cross sectional diagram showing the process ofmanufacturing an active matrix substrate (Embodiment 1);

FIG. 25 is an upper surface diagram showing a pixel portion of an activematrix substrate (Embodiment 1);

FIG. 26 is a cross sectional diagram showing a liquid crystal displaydevice (Embodiment 3);

FIG. 27 is a cross sectional diagram showing a process of manufacturingan active matrix substrate (Embodiment 2);

FIG. 28 is a cross sectional diagram showing the process ofmanufacturing an active matrix substrate (Embodiment 2);

FIG. 29 is an upper surface diagram showing a pixel portion of an activematrix substrate (Embodiment 2);

FIGS. 30A to 30F are diagrams showing examples of electronic devices(Embodiment 4);

FIGS. 31A to 31D are diagrams showing examples of electronic devices(Embodiment 4);

FIGS. 32A to 32C are diagrams showing examples of electronic devices(Embodiment 4);

FIGS. 33A to 33C are diagrams showing an electrode and a convex portionof an experimental substrate;

FIGS. 34A to 34D are diagrams showing the change in liquid crystalorientation due to a first width of a pixel electrode.

FIG. 35 is a cross sectional diagram showing an electric power supplyline when a convex portion has a taper;

FIG. 36 is a diagram showing the relationship between: the height of aconvex portion with respect to a cell gap; and the amount of lightleakage and the width of disclination; and

FIGS. 37A and 37B are diagrams showing the polarity of a voltage appliedto a pixel when performing source line inversion drive.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiment Mode

An embodiment mode of the present invention is shown in FIGS. 17 to 20.Note that the same reference symbols are used in FIGS. 17 to 20 forportions having identical functions.

The upper surface diagram of a pixel shown in FIG. 17 shows asemiconductor layer 306, a gate wiring 301 which becomes a gateelectrode of the semiconductor layer, a source wiring 302 which iselectrically connected to a source region of the semiconductor layer,and a pixel electrode 303 electrically connected to a drain region ofthe semiconductor layer through a contact hole 305. In FIG. 17A, aconvex portion 304 of the present invention is formed on the sourcewiring 302, parallel to the source wiring. There is an effect ofreducing disclination and light leakage formed parallel to the sourcewiring in edge portion of the pixel electrode when performing sourceline inversion drive. Showing the effect of the present invention is afirst region of the pixel electrode formed overlapping with an upperedge portion of the convex portion, and a second region of the pixelelectrode formed in a side portion of the convex portion. The convexportion is therefore formed mutually overlapping with the pixelelectrode.

When gate line inversion drive is performed, the convex portion of thepresent invention may be formed parallel to the gate wiring.

An upper surface of the pixel shown in FIG. 18 has the convex portion304 of the present invention formed parallel to the source wiring 302and the gate wiring 301. For example, the horizontal direction electricfield develops not only in the space between adjacent electrodessandwiched by the source wirings, but also between adjacent pixelelectrodes sandwiched by the gate wirings when source line inversiondrive is performed. FIG. 18 possesses effects of lowering disclinationand light leakage formed by the horizontal direction electric fieldbetween adjacent pixel electrodes sandwiched by the gate wirings. Theconvex portion is the same as that of FIG. 17, and is formed in a regionmutually overlapping with the pixel electrode.

An upper surface of the pixel shown in FIG. 19 has the convex portion304 of the present invention formed in parallel with the source wiring302 and the gate wiring 301. In FIG. 18, the convex portion is tall, andthe fiber tips of a rubbing cloth do not reach a concave portion in agap between the convex portions 304 of FIG. 18, and rubbingirregularities may develop. In order to make the rubbing uniform in FIG.19, convex portions are also formed as dummy patterns in portions atwhich the convex portions and the pixel electrodes 303 do not overlap.

The height of the convex portions may be set equal to no greater than4.4% of the cell gap, and equal to or less than 22.5% of the cell gap,preferably between 4.4% and 15.6% of the cell gap, when the cell gap isequal to or greater than 3.0 μm, and equal to or less than 4.5 μm, inFIGS. 17 to 19. Further, when the cell gap is less than 3.0 μm, it ispreferable to set the height of the convex portions equal to or lessthan 15.6% of the cell gap, more preferably equal to or less than 6.7%of the cell gap. It is preferable that the height of the convex portionsbe equal to or less than 15.6% of the cell gap if the cell gap isgreater than 4.5 μm.

An upper surface of the pixel shown in FIG. 20 has the convex portion ofthe present invention formed in parallel with the source wiring 302 andthe gate wiring 301. The height of the convex portion changes dependingupon location. For example, the horizontal direction electric field whensource line inversion drive is performed is formed not only betweenadjacent pixel electrodes sandwiched by the source wirings 302, but alsobetween adjacent pixel electrodes sandwiched by the gate wirings 301.The horizontal direction electric field between the adjacent pixelelectrodes sandwiched by the source wirings is larger, of course.Considering the way that the electric force lines formed between theadjacent pixel electrodes are formed, the height of the convex portionmay be changed. In FIG. 20, a convex portion 307 having a first height,and a convex portion 308 having a second height are shown. The height ofthe convex portions may be additionally changed depending on the way theelectric field is formed. For example, it is also possible to make theconvex portion having the first height relatively higher than the convexportion having the second height, depending on the way the lines ofelectric force are formed.

The heights of the convex portion having the first height and the convexportion having the second height are preferably equal to or greater than4.4%, and equal to or less than 22.5%, of the cell gap, and may be setequal to or greater than 4.4%, and equal to or less than 15.6%, of thecell gap when the cell gap is from 3.0 μm to 4.5 μm. Further, if thecell gap is less than 3.0 μm, it is preferable that the convex portionhaving the first height and the convex portion having the second heightbe equal to or less than 15.6% of the cell gap, more preferably equal toor less than 6.7% of the cell gap. When the cell gap is greater than 4.5μm, it is preferable that the convex portion having the first height andthe convex portion having the second height be equal to or less than15.6% of the cell gap.

The convex portions may be formed by patterning a photosensitive organicresin film, or an organic resin film, by a photolithography process. Itis also possible, of course, to form the convex portion by patterning aninorganic film such as a silicon oxide film, a silicon nitride film, ora silicon oxynitride film.

The light sensitive resin film may be formed twice in order to changethe height of the pixel portions by location. Further, substrateelements such as semiconductor layers, gate wirings, and source wiringsmay also be formed in locations at which one wants to increase theheight of the convex portions, and may be formed selectively in a convexshape before forming the pixel electrodes.

Further, in FIGS. 17 to 20 the width of the first region of the pixelelectrode formed in the upper portion of the convex portion may be setequal to or greater than 0.5 μm, preferably equal to or greater than 1.0μm.

The present invention is not limited by the above stated embodimentmode, and it is also possible to combine the characteristics of theembodiment mode.

Embodiments Embodiment 1

An embodiment of the present invention is explained using FIGS. 21A to25. Note that a description is set forth regarding a step forfabricating a pixel TFT; a switching element of the pixel portion andTFTs for driver circuit (a signal line driver circuit and a scanningline driver circuit) provided in the pixel portion of a display deviceusing the driver method of the present invention and periphery portionof the pixel portion. For the simplicity of the explanation, a CMOScircuit, which is a fundamental structure circuit for the driver circuitportion, and the n-channel TFT for the pixel TFT of the pixel portionare shown in figures by a cross-sectional figure according to the path.

First, as shown in FIG. 21A, a base film 401 made of an insulating filmsuch as a silicon oxide film, a silicon nitride film, or a siliconoxynitride film, is formed on a substrate 400 made of a glass such asbarium borosilicate glass or aluminum borosilicate glass, typically, aglass such as Corning Corp. #7059 glass or #1737 glass. For example, alamination film of a silicon oxynitride film 401 a, manufactured fromSiH₄, NH₃, and N₂O by plasma CVD, and formed having a thickness of 10 to200 nm (preferably between 50 and 100 nm), and a hydrogenated siliconoxynitride film 401 b, similarly manufactured from SiH₄ and N₂O, andformed having a thickness of 50 to 200 nm (preferably between 100 and150 nm), is formed. A two-layer structure is shown for the base film 401in Embodiment 1, but a single layer film of the insulating film, and astructure in which more than two layers are laminated, may also beformed.

Island shape semiconductor layers 402 to 406 are formed by crystallinesemiconductor films made from a semiconductor film having an amorphousstructure, using a laser crystallization method or a known thermalcrystallization method. The thickness of the island shape semiconductorlayers 402 to 406 may be formed from 25 to 80 nm (preferably between 30and 60 nm). There are no limitations placed on the materials for forminga crystalline semiconductor film, but it is preferable to form thecrystalline semiconductor films by silicon or a silicon germanium (SiGe)alloy.

A laser such as a pulse oscillation type or continuous light emissiontype excimer laser, a YAG laser, or a YVO₄ laser can be used tofabricate the crystalline semiconductor films by the lasercrystallization method. A method of condensing laser light emitted froma laser oscillator into a linear shape by an optical system and thenirradiating the light to the semiconductor film may be used when thesetypes of lasers are used. The crystallization conditions may be suitablyselected by the operator, but when using the excimer laser, the pulseoscillation frequency is set to 30 Hz, and the laser energy density isset form 100 to 400 mJ/cm² (typically between 200 and 300 mJ/cm²).Further, when using the YAG laser, the second harmonic is used and thepulse oscillation frequency is set from 1 to 10 kHz, and the laserenergy density may be set from 300 to 600 mJ/cm² (typically between 350and 500 mJ/cm²). The laser light condensed into a linear shape with awidth of 100 to 1000 μm, for example 400 μm, is then irradiated over theentire surface of the substrate. This is performed with an overlap ratioof 80 to 98% for the linear laser light.

A gate insulating film 407 is formed covering the island shapesemiconductor layers 402 to 406. The gate insulating film 407 is formedof an insulating film containing silicon with a thickness of 40 to 150nm by plasma CVD or sputtering. A 120 nm thick silicon oxynitride filmis formed in Embodiment 1. The gate insulating film is not limited tothis, type of silicon oxynitride film, of course, and other insulatingfilms containing silicon may also be used in a single layer or in alamination structure. For example, when using a silicon oxide film, itcan be formed by plasma CVD with a mixture of TEOS (tetraethylorthosilicate) and O₂, at a reaction pressure of 40 Pa, with thesubstrate temperature set from 300 to 400° C., and by discharging at ahigh frequency (13.56 MHZ) electric power density of 0.5 to 0.8 W/cm².Good characteristics as a gate insulating film can be obtained bysubsequently performing thermal annealing, at between 400 and 500° C.,of the silicon oxide film thus manufactured.

A first conductive film 408 and a second conductive film 409 are thenformed on the gate insulating film 407 in order to form gate electrodes.The first conductive film 408 is formed of a TaN film with a thicknessof 50 to 100 nm, and the second conductive film 409 is formed of a Wfilm having a thickness of 100 to 300 nm, in Embodiment 1.

The W film is formed by sputtering with a W target, which can also beformed by thermal CVD using tungsten hexafluoride (WF₆). Whichever isused, it is necessary to make the film become low resistance in order touse it as the gate electrode, and it is preferable that the resistivityof the W film be made equal to or less than 20 μΩm. The resistivity canbe lowered by enlarging the crystal grains of the W film, but for casesin which there are many impurity elements such as oxygen within the Wfilm, crystallization is inhibited, thereby the film becomes highresistance. A W target having a purity of 99.9999% is thus used insputtering. In addition, by forming the W film while taking sufficientcare that no impurities from the gas phase are introduced at the time offilm formation, the resistivity of 9 to 20 μΩcm can be achieved.

Note that, although the first conductive film 408 is a TaN film and thesecond conductive film 409 is a W film in Embodiment 1, both may also beformed from an element selected from the group consisting of Ta, W, Ti,Mo, Al, and Cu, or from an alloy material having one of these elementsas its main constituent, and a chemical compound material. Further, asemiconductor film, typically a polycrystalline silicon film into whichan impurity element such as phosphorus is doped, may also be used.Examples of preferable combinations other than that used in Embodiment 1include: forming the first conductive film 408 by tantalum nitride (TaN)and combining it with the second conductive film 409 formed from a Wfilm; forming the first conductive film 408 by tantalum nitride (TaN)and combining it with the second conductive film 409 formed from an Alfilm; and forming the first conductive film 408 by tantalum nitride(TaN) and combining it with the second conductive film 409 formed from aCu film.

Then, masks 410 to 415 are formed from resist, and a first etchingtreatment is performed in order to form electrodes and wirings. An ICP(inductively coupled plasma) etching method is used in Embodiment 1. Anetching gas is mixed, and a plasma is generated by applying a 500 W RFelectric power (13.56 MHZ) to a coil shape electrode at 1 Pa. A 100 W RFelectric power (13.56 MHZ) is also applied to the substrate side (testpiece stage), effectively applying a negative self-bias voltage. By theetching gas is selected appropriately, the W film and the Ta film areetched to the approximately same level.

Edge portions of the first conductive layer and the second conductivelayer are made into a tapered shape in accordance with the effect of thebias voltage applied to the substrate side under the above etchingconditions by using a suitable resist mask shape. The angle of thetapered portions is from 15 to 45°. The etching time may be increased byapproximately 10 to 20% in order to perform etching without any residueremaining on the gate insulating film. The selectivity of a siliconoxynitride film with respect to a W film is from 2 to 4 (typically 3),and therefore approximately 20 to 50 nm of the exposed surface of thesilicon oxynitride film is etched by this over-etching process. Firstshape conductive layers 417 to 422 (first conductive layers 417 a to 422a and second conductive layers 417 b to 422 b) are thus formed of thefirst conductive layers and the second conductive layers in accordancewith the first etching process. Reference numeral 416 denotes a gateinsulating film, and the regions not covered by the first shapeconductive layers 417 to 422 are made thinner by etching of about 20 to50 nm.

A first doping process is then performed, and an impurity element whichimparts n-type conductivity is added. Ion doping or ion injection may beperformed for the method of doping. Ion doping is performed under theconditions of a dose amount of from 1×10¹³ to 5×10¹⁴ atoms/cm² and anacceleration voltage of 60 to 100 keV. A periodic table group 15element, typically phosphorus (P) or arsenic (As) is used as theimpurity element which imparts n-type conductivity, and phosphorus (P)is used here. The conductive layers 417 to 420 become masks with respectto the n-type conductivity imparting impurity element in this case, andfirst impurity regions 423 to 426 are formed in a self-aligning manner.The impurity element which imparts n-type conductivity is added to thefirst impurity regions 423 to 426 with a concentration in the range of1×10²⁰ to 1×10²¹ atoms/cm³. (FIG. 21B)

Second etching treatment is then conducted as shown in FIG. 21C. In thisetching treatment, ICP etching is employed, a reaction gas is introducedto chambers, and plasma is generated by giving RF (13.56 MHz) power of500 W to a coiled electrode at a pressure of 1 Pa. RF (13.56 MHz) powerof 50 W is also given to the substrate side (sample stage) so that aself-bias voltage lower than that of the first etching treatment can beapplied. The W film is subjected to anisotropic etching and the secondshape conductive films 427 to 432 are obtained.

A second doping process is then performed, as shown in FIG. 21C. Thedose amount is smaller than that of the first doping process in thiscase, and an impurity element which imparts n-type conductivity is dopedunder high acceleration voltage conditions. For example, dopingperformed with the acceleration voltage set from 70 to 120 keV, and adose amount of 1×10¹³ atoms/cm³, and a new impurity region is formedinside the first impurity region is formed inside the first impurityregion formed in the island shape semiconductor layers of FIG. 21B. Thesecond conductive layers 427 to 433 are used as masks with respect tothe impurity element, and doping is performed so as to also add theimpurity element into regions under the first conductive layers 427 a to433 a. The second impurity regions 433 to 437, which is overlapped withthe first conductive layer 427 a to 430 a is formed. The impurityelements which imparts an n-type conductivity is made its concentrationrange of 1×10¹⁷ to 1×10¹⁸ atoms/cm³ in the second impurity region.

By etching the gate insulating film 416, TaN which is the firstconductive layer is backward by the etching simultaneously, so thatthere are formed third conductive layers 438 through 443 (firstconductive layers 438 a to 443 a and second conductive layers 438 b to443 b). Reference numeral 444 denotes a gate insulating film, andregions not covered by the third shape conductive layers 438 to 443 areadditionally etched on the order of 20 to 50 nm, forming thinnerregions.

By the third etching, there are formed third impurity regions 445 to 449overlapping the first conductive layers 438 a to 441 a and the forthimpurity regions 450 to 454 at the external of the third impurity regionas shown in FIG. 22A. Thus, the concentration of the impurity elementsimparting an n-type conductivity in the third impurity region and theforth impurity region is as same as that in the second impurity region.

Fourth impurity regions 458 to 461 added with an impurity element havinga conductivity type which is the opposite of a conductivity typeimpurity element, are then formed as shown in FIG. 22B in the islandshape semiconductor layers 403, 406 which form p-channel TFTs. The thirdshaped conductive layers 439, 441 is used as a mask with respect to theimpurity element, and the impurity regions are formed in a self-aligningmanner. The island shape semiconductor films 402, 404, 405 which formn-channel TFTs, are covered over their entire surface areas by resistmasks 455 to 457. Phosphorus is added to the impurity regions 458 to 461at a different concentration, and ion doping is performed here usingdiborane (B₂H₆), so that the respective impurity regions have theimpurity concentration of 2×10²⁰ to 2×10²¹ atoms/cm³.

Impurity regions are formed in the respective island shape semiconductorlayers by the above processes. The conductive layers (the conductivelayers forming the gate electrode) 438 to 441 overlapping the islandshape semiconductor layers function as gate electrodes. The referencenumeral 442 functions as a source wiring and 443 functions as a wiringin the driver circuit.

A process of activating the impurity elements added to the respectiveisland shape semiconductor layers is then performed with the aim ofcontrolling conductivity type as shown in FIG. 22C. Thermal annealingusing an annealing furnace is performed for this process. In addition,laser annealing and rapid thermal annealing (RTA) can also be applied.Thermal annealing is performed with an oxygen concentration equal to orless than 1 ppm, preferably equal to or less than 0.1 ppm, in a nitrogenatmosphere at 400 to 700° C., typically between 500 and 600° C. Heattreatment is performed for 4 hours at 500° C. in Embodiment 1. However,for cases in which the wiring material used in the third conductivelayers 438 to 443 is weak with respect to heat, it is preferable toperform activation after forming an interlayer insulating film (havingsilicon as its main constituent) in order to protect the wirings and thelike.

In addition, heat treatment is performed for 1 to 12 hours at 300 to450° C. in an atmosphere containing between 3 and 100% hydrogen,performing hydrogenation of the island shape semiconductor layers. Thisprocess is one of terminating dangling bonds in the island shapesemiconductor layers by hydrogen which is thermally excited. Plasmahydrogenation (using hydrogen excited by a plasma) may also be performedas another means of hydrogenation.

A first interlayer insulating film 472 is then formed from a siliconoxynitride film having a thickness of 100 to 200 nm, as shown in FIG.23. An acrylic resin film or a polyimide resin film is then formed witha thickness of 1.8 μm on the first interlayer insulating film 472 as asecond interlayer insulating film 473. An etching process is performednext in order to form contact holes.

A conductive metallic film is then formed by sputtering or vacuumevaporation. A Ti film having a thickness of 50 to 150 μm is formed,contacts with the semiconductor layers forming source regions or drainregions of the island shape semiconductor films, an aluminum (Al) filmis formed having a thickness of 300 to 400 nm on the Ti film, and inaddition, a Ti film or a titanium nitride (TiN) film is formed having athickness of 100 to 200 nm, resulting in a three layer structure.

Source wirings 474 to 476 for forming contacts with the source regionsof the island shape semiconductor film in the driver circuit portion,and drain wirings 477 to 479 for forming contacts with the drainregions, are then formed.

Further, a connection electrode 480, a gate wiring 481, a drainelectrode 482, and an electrode 492 are formed in the pixel portion.

The connection electrode 480 electrically connects a source wiring 483and a first semiconductor film 484. Although not shown in the figures,the gate wiring 481 is electrically connected to a conductive layer 485forming a gate electrode, through a contact hole. The drain electrode482 is electrically connected to a drain region of the firstsemiconductor film 484. The electrode 492 is electrically connected to asecond semiconductor film 493, and the second semiconductor layer 493functions as an electrode of a storage capacitor 505.

Next, as shown in FIG. 24, a photolithography process is performed usinga photosensitive resin film, and a convex portion 600 is formed having athickness of 0.32 μm on the source wiring 483. As a photosensitive resinfilm, a material in which JSR Corporation product BPR-107VL is dilutedby PGNEA (propylene glycol monomethyl ether acetate), reducing itsviscosity, is used. In the upper surface diagram of the pixel portion,the convex portion is patterned into a thin, long rectangular shape andthe width of its minor axis is set to 4.0

A transparent conductive film is then formed over the entire surface, asshown in FIG. 23 and FIG. 24, and a pixel electrode 491 is formed by apatterning process and an etching process using a photomask. The pixelelectrode 491 is formed on the second interlayer insulating film 473,and portions overlapping with the drain electrode 482 and the electrode492 of the pixel TFT are formed, forming a connective structure. Thewidth of a first region 601 of the pixel electrode 491 formed in theupper edge portion of the convex portion is set to be 1.0 μm. Thetransparent conductive film can be formed by a method such as sputteringor vacuum evaporation using a material, such as indium oxide (In₂O₃), oran alloy of indium oxide and tin oxide (In₂O₃—SnO₂; ITO). The etchingprocess for this type of material may be performed by a hydrochloricacid solution. However, residue easily develops with etching of ITO inparticular, and therefore an alloy of indium oxide and zinc oxide(In₂O₃—ZnO) may also be used in order to improve the etchingworkability. The indium oxide and zinc oxide alloy has superior surfacesmoothness, and is also superior to ITO in its thermal stability, andtherefore a corrosive reaction with AL contacting at the edge surfacesof the drain electrode 482 can be prevented. Similarly, zinc oxide (ZnO)is also a suitable material, and in addition, a material such as zincoxide to which gallium (Ga) is added (ZnO:Ga) in order to increase theoptical light transmittivity and the conductivity can also be used.

An active matrix substrate corresponding to a transmission type liquidcrystal display device can thus be completed.

A driver circuit portion having an n-channel TFT 501, a p-channel TFT502, and an n-channel TFT 503, and a pixel portion having a pixel TFT504 and a storage capacitor 505 can thus be formed on the samesubstrate. This type of substrate is referred to as an active matrixsubstrate in this specification, for convenience. (See FIG. 23.)

The n-channel TFT 501 of the driver circuit portion has the channelforming region 462, the third impurity region 445 (GOLD region)overlapping with the conductive layer 438 forming a gate electrode, thefourth impurity region 450 (LDD region) formed on the outside of thegate electrode, and the first impurity region 423 which functions as asource region or a drain region. The p-channel TFT 502 has the channelforming region 463, the fifth impurity region 446 overlapping with theconductive layer 439 forming a gate electrode, and the sixth impurityregion 451 which functions as a source region or a drain region. Then-channel TFT 503 has the channel forming region 464, the third impurityregion 447 (GOLD region) which overlaps with the conductive layer 440forming a gate electrode, the fourth impurity region 452 (LDD region)formed on the outside of the gate electrode, and the first impurityregion 425 which functions as a source region or a drain region.

The pixel TFT 504 of the pixel portion has the channel forming region465, the third impurity region 448 (GOLD region) which overlaps with theconductive layer 485 forming a gate electrode, the fourth impurityregion 453 (LDD region) formed on the outside of the gate electrode, andthe first impurity region 426 which functions as source region or adrain region. Further, an impurity element imparting p-type conductivityis added to the semiconductor film 493, which functions as one electrodeof the storage capacitor 505. The storage capacitor is formed by thesemiconductor layer 485, which forms the gate electrode, and aninsulating layer (the same layer as the gate insulating film) formedtherebetween.

Cross sections in which the upper surface diagram of FIG. 25 is cutalong the dashed line A-A′ and the dashed line B-B′ correspond to thecross sections in which FIG. 23 is cut along the dashed line A-A′ andthe dashed line B-B′. A cross section in which the upper surface diagramof FIG. 25 is cut along the dashed line C-C′ corresponds to the crosssection in which FIG. 24 is cut along the dashed line C-C′. Referencenumerals 801 to 805 of FIG. 25 denote contact holes.

The convex portion formed on the source line in the upper surfacediagram of FIG. 25 is made into a rectangular island shape. However, itis also possible to use a stripe shape in which the pixel portions ofadjacent pixels are mutually connected.

Embodiment 2

A portion of the method of manufacturing the active matrix substratemanufactured by Embodiment 1 can be applied to a reflection type liquidcrystal display device.

Processing is first performed in accordance with FIGS. 21A to 22C ofEmbodiment 1.

The first interlayer insulating film 472 is then formed from a siliconoxynitride film having a thickness of 100 to 200 nm, as shown in FIG.27. An acrylic resin film or a polyimide film is then formed with athickness of 1.8 μm on the first interlayer insulating film 472 as thesecond interlayer insulating film 473. An etching process is performednext in order to form contact holes.

Next, as shown in FIG. 28, a photolithography process is performed usinga photosensitive resin film, and the convex portion 600 is formed havinga thickness of 0.32 μm on the source wiring 483. A material in which JSRCorporation product BPR-107VL is diluted by PGMEA (propylene glycolmonomethyl ether acetate), reducing its viscosity, is used.

A conductive metallic film is then formed by sputtering or vacuumevaporation, as shown in FIGS. 27 and 28. A Ti film having a thicknessof 50 to 150 μm is totaled, contacts with the semiconductor layersforming source regions or drain regions of the island shapesemiconductor films, an aluminum (Al) film is formed to have a thicknessof 300 to 400 nm on the Ti film, and in addition, a Ti film or atitanium nitride (TiN) film is formed to have a thickness of 100 to 200nm, resulting in a three layer structure.

The source wirings 474 to 476 for forming contacts with the sourceregions of the island shape semiconductor film in the driver circuitportion, and the drain wirings 477 to 479 for totaling contacts with thedrain regions, are then formed.

Further, the connection electrode 480, the gate wiring 481, and thedrain electrode 482 are formed in the pixel portion. The drain electrode482 has a function as a pixel electrode of the reflecting liquid crystaldisplay device in Embodiment 2. Note that, as shown in FIG. 28, theupper edge portion of the convex portion and the drain electrode 482mutually overlap. The width of a first region 602 of the drain electrodeis set to 1.5 μm.

The connection electrode 480 electrically connects the source wiring 483and the first semiconductor film 484. Although not shown in the figures,the gate wiring 481 electrically connects to the conductive layer 485forming a gate electrode, through a contact hole. The drain electrode482 electrically connects to a drain region of the first semiconductorfilm 484. In addition, the drain electrode 482 is electrically connectedto the first semiconductor film 493, and the second semiconductor film493 functions as an electrode of the storage capacitor 505.

The second semiconductor films 493 formed in each pixel, and theconductive layers 485 forming the gate electrodes are made intoelectrodes of the storage capacitor. The gate insulating film 444functions as a dielectric film of the storage capacitor. The secondsemiconductor film 493 becomes the same electric potential as the drainelectrode 482. The semiconductor layer 485 becomes the same electricpotential as the gate wiring.

An active matrix substrate corresponding to a reflection type liquidcrystal display device can thus be completed.

A driver circuit portion having the n-channel TFT 501, the p-channel TFT502, and the n-channel TFT 503, and a pixel portion having the pixel TFT504 and the storage capacitor 505 can thus be formed on the samesubstrate. This type of substrate is referred to as an active matrixsubstrate within this specification, for convenience.

The n-channel TFT 501 of the driver circuit portion has the channelforming region 462, the third impurity region 445 (GOLD region)overlapping with the conductive layer 438 forming a gate electrode, thefourth impurity region 450 (LDD region) formed on the outside of thegate electrode, and the first impurity region 423 which functions as asource region or a drain region. The p-channel TFT 502 has the channelforming region 463, the fifth impurity region 446 overlapping with theconductive layer 439 forming a gate electrode, and the sixth impurityregion 451 which functions as a source region or a drain region. Then-channel TFT 503 has the channel forming region 464, the third impurityregion 447 (GOLD region) which overlaps with the conductive layer 440forming a gate electrode, the fourth impurity region 452 (LDD region)formed on the outside of the gate electrode, and the first impurityregion 425 which functions as a source region or a drain region.

The pixel TFT 504 of the pixel portion has the channel forming region465, the third impurity region 448 (GOLD region) which overlaps with theconductive layer 485 forming a gate electrode, the fourth impurityregion 453 (LDD region) formed on the outside of the gate electrode, andthe first impurity region 426 which functions as sweet area sourceregion or a drain region. Further, an impurity element imparting p-typeconductivity is added to the semiconductor film 493, which functions asone electrode of the storage capacitor 505. The storage capacitor isformed by the semiconductor layer 485, which forms the gate electrode,and an insulating layer (the same layer as the gate insulating film)formed in between.

Cross sections taken along the dashed line D-D′ and the dashed Line E-E′in a top view of FIG. 29 correspond to the cross sections taken alongthe dashed line D-D′ and the dashed line E-E′ in FIG. 27, respectively.A cross section taken along the dashed line F-F′ in the top view of FIG.29 corresponds to the cross section in which FIG. 28 is cut along thedashed line F-F.

Embodiment 3

In this embodiment, the manufacturing process of an active matrix liquidcrystal display device from the active matrix substrate manufactured inEmbodiment 1 is described below. FIG. 26 is used for explanation.

First, in accordance with Embodiment 1, the active matrix substrate isobtained. FIG. 26 shows a cross-sectional view taken along the line A-A′and C-C′ of the pixel portion of the active matrix substrate shown inFIG. 25. In an active matrix substrate, the driver circuit portion 506and the pixel portion 507 are formed.

First, an orientation film 512 is formed on the active matrix substrate,and is subjected to a rubbing process. Note that, in this embodiment,before the formation of the orientation film 512, a columnar spacer formaintaining a gap between the substrates is formed at a desired positionby patterning an organic resin film such as an acrylic resin film. Thecolumnar spacer having 4.0 urn height is used in this embodiment.Further, spherical spacers may be scattered on the entire surface of thesubstrate in place of the columnar spacer.

Next, an opposing substrate 508 is prepared. On the opposing substrate508, there are formed a colored layers, a light shielding layer andcolor filters arranged to correspond to the respective pixels. Further,the driver circuit portion is also provided with a light-shieldinglayer. A leveling film is provided to cover the color filters and thelight-shielding layer. Next, in the pixel portion an opposing electrode510 is formed from a transparent conductive film on the leveling film,an orientation film 511 is formed on the entire surface of the opposingsubstrate, and a rubbing process is conducted thereon.

Then, the active matrix substrate on which a pixel portion and a drivercircuit are formed is stuck with the opposing substrate by a sealingagent 513. A filler is mixed in the sealing agent 513, and the twosubstrates are stuck with each other while keeping a uniform gap by thisfiller and the columnar spacer. Thereafter, a liquid crystal material514 is injected between both the substrates to encapsulate thesubstrates completely by an encapsulant (not shown). A known liquidcrystal material may be used as the liquid crystal material 514. Thus,the active matrix liquid crystal display device shown in FIG. 26 iscompleted. Then, if necessary, the active matrix substrate and theopposing substrate are parted into desired shapes. In addition, by usinga known technique, a phase difference plate, a polarizing plate or thelike may be suitably provided. Then, an FPC is stuck with the substrateusing a known technique.

Thus, the liquid crystal display panel manufactured according toabove-mentioned steps can be used as a display portion of variouselectronic devices.

This embodiment can be combined with Embodiment 2.

In this embodiment, the edge of pixel electrode 491 is formedoverlapping with a convex portion 600 which have 0.32 μm height. Theheight of the convex portion becomes 8% of the cell gap because theheight of the cell gap is 4.0 μm. It is understood that the height ofthe convex portion has an effect to decrease disclination and lightleakage by a graphic chart of FIG. 9 and FIG. 36.

Embodiment 4

The liquid crystal display device formed by implementing an embodimentamong above-mentioned Embodiments 1 to 3 can be applied to variouselectro-optical equipments. Thus the present invention can be applied toall of the electronic equipments having these electro-optical devices asthe display portion.

The following can be given as examples of the electronic equipment:video cameras; digital cameras; projectors; head mounted displays(goggle type display); car navigation systems; car stereo; personalcomputers; portable information terminals (such as mobile computers,portable telephones and electronic notebook). An example of these isshown in FIGS. 30, 31 and 32.

FIG. 30A shows a personal computer, and it includes a main body 2001, animage input section 2002, a display portion 2003, and a keyboard 2004.The present invention is applicable to the display portion 2003.

FIG. 30B shows a video camera, and it includes a main body 2101, adisplay portion 2102, a voice input section 2103, operation switches2104, a battery 2105, and an image receiving section 2106. The presentinvention is applicable to the display portion 2102.

FIG. 30C shows a mobile computer, and it includes a main body 2201, acamera section 2202, an image receiving section 2203, operation switches2204, and a display portion 2205. The present invention is applicable tothe display portion 2205.

FIG. 30D shows a goggle type display, and it includes a main body 2301;a display portion 2302; and an arm section 2303. The present inventionis applicable to the display portion 2302.

FIG. 30E shows a player using a recording medium which records a program(hereinafter referred to as a recording medium), and it includes a mainbody 2401; a display portion 2402; a speaker section 2403; a recordingmedium 2404; and operation switches 2405. This player uses DVD (digitalversatile disc), CD, etc. for the recording medium, and can be used formusic appreciation, film appreciation, games and Internet. The presentinvention is applicable to the display portion 2402.

FIG. 30F shows a digital camera, and it includes a main body 2501; adisplay portion 2502; a view finder 2503; operation switches 2504; andan image receiving section (not shown in the figure). The presentinvention can be applied to the display portion 2502.

FIG. 31A is a front-type projector, and it includes a projection device2601 and a screen 2602. The present invention is applicable to a liquidcrystal display device 2808 which comprises one of the projection device2601.

FIG. 31B is a rear-type projector, and it includes a main body 2701, aprojection device 2702, a mirror 2703, and a screen 2704. The presentinvention is applicable to a liquid crystal display device 2808 whichcomprises one of the projection device 2702.

FIG. 31C is a diagram showing an example of the structure of theprojection devices 2601, 2702 in FIGS. 31A and 31B. The projectiondevice 2601 or 2702 comprises a light source optical system 2801,mirrors 2802, 2804 to 2806, dichroic mirrors 2803, a prism 2807, liquidcrystal display devices 2808, phase difference plates 2809, and aprojection optical system 2810. The projection optical system 2810 iscomposed of an optical system including a projection lens. This exampleshows an example of three-plate type but not particularly limitedthereto. For instance, the invention may be applied also to a singleplate type optical system. Further, in the light path indicated by anarrow in FIG. 31C, an optical system such as an optical lens, a filmhaving a polarization function, a film for adjusting a phase difference,and an IR film may be suitably provided by a person who carries out theinvention.

FIG. 31D is a diagram showing an example of the structure of the lightsource optical system 2801 in FIG. 31C. In this embodiment, the lightsource optical system 2801 comprises a reflector 2811, a light source2812, lens arrays 2813, 2814, a polarization conversion element 2815,and a condenser lens 2816. The light source optical system shown in FIG.31D is merely an example, and is not particularly limited to theillustrated structure. For example, a person who carries out theinvention is allowed to suitably add to the light source optical systeman optical system such as an optical lens, a film having a polarizationfunction, a film for adjusting a phase difference, and an IR film.

Note that a transmission electro-optical device is used as the projectorshown in FIG. 31, a reflection type electro-optical device is notillustrated.

FIG. 32A is a portable telephone, and it includes a main body 2901, anaudio output section 2902, an audio input section 2903, a displayportion 2904, operation switches 2905, and an antenna 2906. The presentinvention can be applied to the display portion 2904.

FIG. 32B is a portable book (electronic book), and it includes a mainbody 3001, display portions 3002 and 3003, a recording medium 3004,operation switches 3005, and an antenna 3006. The present invention canbe applied to the display portions 3002 and 3003.

FIG. 32C is a display, and it includes a main body 3101, a support stand3102, and a display portion 3103. The present invention can be appliedto the display portion 3103. The display of the present invention isadvantageous for a large size screen in particular, and is advantageousfor a display equal to or greater than 10 inches (especially equal to orgreater than 30 inches) in diagonal.

The applicable range of the present invention is thus extremely wide,and it is possible to apply the present invention to electronicequipment in all fields. Further, the electronic equipment of Embodiment4 can be realized by using a constitution of any combination ofEmbodiments 1 to 3.

Orientation irregularities of liquid crystals, in which there isdisclination and light leakage of a liquid crystal display device whendisplaying a black level, can thus be reduced in accordance with thepresent invention, and a liquid crystal display device having highcontrast and good visibility can be provided.

What is claimed is:
 1. A liquid crystal display device comprising: athin film transistor comprising a semiconductor layer over a substrate;a gate wiring comprising a conductive material, and a pattern comprisingthe conductive material over the substrate; a source wiring over thegate wiring and the pattern; a convex portion over the substrate, andcomprising a first portion in parallel with the gate wiring, and asecond portion in parallel with the source wiring; and a pixel electrodeelectrically connected to the thin film transistor, and partiallyoverlapped with the convex portion; wherein an edge of the pixelelectrode and the second portion are overlapped with each other, whereinthe first portion intersects with the source wiring, wherein the convexportion comprises the pattern, and wherein the semiconductor layer isnot overlapped with the second portion.
 2. A liquid crystal displaydevice comprising: a pixel portion over a substrate, and comprising: afirst thin film transistor comprising a semiconductor layer over thesubstrate; a gate wiring comprising a conductive material, and a patterncomprising the conductive material over the substrate; a source wiringover the gate wiring and the pattern; a convex portion over thesubstrate, and comprising a first portion in parallel with the gatewiring, and a second portion in parallel with the source wiring; and apixel electrode electrically connected to the first thin filmtransistor, and partially overlapped with the convex portion; a drivercircuit over the substrate, and comprising a second thin filmtransistor, wherein an edge of the pixel electrode and the secondportion are overlapped with each other, wherein the first portionintersects with the source wiring, wherein the convex portion comprisesthe pattern, and wherein the semiconductor layer is not overlapped withthe second portion.
 3. A liquid crystal display device comprising: athin film transistor comprising a semiconductor layer over a substrate;a gate wiring comprising a conductive material, and a pattern comprisingthe conductive material over the substrate; a source wiring over thegate wiring and the pattern; a convex portion over the substrate, andformed comprising a first portion in parallel with the gate wiring, anda second portion in parallel with the source wiring; and an insulatingfilm over the thin film transistor; a pixel electrode over theinsulating film, electrically connected to the thin film transistor, andpartially overlapped with the convex portion; wherein an edge of thepixel electrode and the second portion are overlapped with each other,wherein the first portion intersects with the source wiring, wherein theconvex portion comprises the pattern, and wherein the semiconductorlayer is not overlapped with the second portion.
 4. A liquid crystaldisplay device according to claim 1, wherein the convex portion isprovided over an insulating film.
 5. A liquid crystal display deviceaccording to claim 2, wherein the convex portion is provided over aninsulating film.
 6. A liquid crystal display device according to claim3, wherein the convex portion is provided over the insulating film.
 7. Aliquid crystal display device according to claim 1, further comprising astorage capacitor over the substrate, and comprising a first electrodecomprising the semiconductor layer, a second electrode comprising a gateelectrode of the thin film transistor, and an dielectric film comprisinga gate insulating film of the thin film transistor.
 8. A liquid crystaldisplay device according to claim 2, further comprising a storagecapacitor over the substrate, and comprising a first electrodecomprising the semiconductor layer, a second electrode comprising a gateelectrode of the thin film transistor, and an dielectric film comprisinga gate insulating film of the thin film transistor.
 9. A liquid crystaldisplay device according to claim 3, further comprising a storagecapacitor over the substrate, and comprising a first electrodecomprising the semiconductor layer, a second electrode comprising a gateelectrode of the thin film transistor, and an dielectric film comprisinga gate insulating film of the thin film transistor.
 10. A liquid crystaldisplay device according to claim 1, wherein the convex portioncomprises a film selected from the group consisting of a photosensitiveorganic resin film, an organic resin film, a silicon oxide film, asilicon nitride film and a silicon oxynitride film.
 11. A liquid crystaldisplay device according to claim 2, wherein the convex portioncomprises a film selected from the group consisting of a photosensitiveorganic resin film, an organic resin film, a silicon oxide film, asilicon nitride film and a silicon oxynitride film.
 12. A liquid crystaldisplay device according to claim 3, wherein the convex portioncomprises a film selected from the group consisting of a photosensitiveorganic resin film, an organic resin film, a silicon oxide film, asilicon nitride film and a silicon oxynitride film.
 13. A liquid crystaldisplay device according to claim 1, wherein a taper angle of the convexportion is less than 90°.
 14. A liquid crystal display device accordingto claim 2, wherein a taper angle of the convex portion is less than90°.
 15. A liquid crystal display device according to claim 3, wherein ataper angle of the convex portion is less than 90°.
 16. A liquid crystaldisplay device according to claim 1, wherein the liquid crystal displaydevice is a reflective type liquid crystal display device.
 17. A liquidcrystal display device according to claim 2, wherein the liquid crystaldisplay device is a reflective type liquid crystal display device.
 18. Aliquid crystal display device according to claim 3, wherein the liquidcrystal display device is a reflective type liquid crystal displaydevice.
 19. A liquid crystal display device according to claim 1,wherein the liquid crystal display device is a transmission type liquidcrystal display device.
 20. A liquid crystal display device according toclaim 2, wherein the liquid crystal display device is a transmissiontype liquid crystal display device.
 21. A liquid crystal display deviceaccording to claim 3, wherein the liquid crystal display device is atransmission type liquid crystal display device.
 22. A liquid crystaldisplay device according to claim 1, wherein the liquid crystal displaydevice is applied to an electronic equipment selected from the groupconsisting of a video camera, a digital camera, a projector, a headmounted display, a mobile computer, a portable telephone and anelectronic notebook.
 23. A liquid crystal display device according toclaim 2, wherein the liquid crystal display device is applied to anelectronic equipment selected from the group consisting of a videocamera, a digital camera, a projector, a head mounted display, a mobilecomputer, a portable telephone and an electronic notebook.
 24. A liquidcrystal display device according to claim 3, wherein the liquid crystaldisplay device is applied to an electronic equipment selected from thegroup consisting of a video camera, a digital camera, a projector, ahead mounted display, a mobile computer, a portable telephone and anelectronic notebook.